SiO2 and Si3N4 dielectric films can be etched by available dry-etching techniques.

ICP-RIE system can be used for dry-etching of compound materials.

SiO2 and Si3N4 dielectric films can be deposed on substrates.

The system is mainly used to do high-resolution dry-etching fabrication on silicon substrates.

EB lithography system uses an electron beam to generate patterns on a surface of photoresist.

EB lithography system uses an electron beam to generate patterns on a surface of photoresist.

A FIB system is a very promising tool and is very similarly to a scanning electron microscope, except that it uses a finely focused beam of gallium (Ga+) ions instead of the latter's use of electrons. This focused primary beam of gallium ions is rastered on the surface of the material to do both micro- and nano-fabrication.

The system is used in the MOMBE growth of III-V-N compounds especially in the applications of next generation optical communication.

The system is useful in the application of making a semiconductor laser formed by using InAs quantum dots.

The system is used in the MOMBE growth of II-VI compounds such as ZnSe and ZnO.

The system is used for fabricating the microcavity structures or devices by (ZnSSe/MgSSe) DBR growth.

SiO2 films can be deposed on substrates.

High uniformity of illumination distribution with multi-mirror lamp house for UV contact exposure.

The vacuum thermal evaporation deposition system consists in heating until evaporation of the material, semiconductor and inorganic dielectric films to be deposited.

The system is used to deposit metal film.

EB lithography system uses an electron beam to generate patterns on a surface of photoresist.

The system can do UV light irradiation with vacuum-UV excimer lamp.

The RIBER MBE 32 system is a highly flexible and efficient 2" single-wafer epi reactor, which provides all the necessary MBE tools and in-situ characterization capabilities to achieve state-of-the-art epitaxy of III-Vs, II-VIs, MCTs, nitrides and silicon alloys. With more than 250 operational systems worldwide, its unequalled reliability, low operating cost and proven track record in the supply of high quality electronic and optoelectronic materials have made it the "tool of choice" for the growth of compound semiconductor materials.

FT-IR spectrophotometer is a measurement instrument whereby IR spectra are collected. FTIR is a non-destructive analytical technique used to identify materials.

The spectrophotometer measures the UV, visible and NIR spectra of the molecular structure.

In an XPS experiment, a specimen is irradiated by low energy X-rays in an ultra high vacuum. This causes photo-ionisation of the atoms at the specimen's surface: photoelectrons are emitted from energy levels determined by the electronic structure of the specimen. The XPS analysis technique examines the kinetic energies of these photoelectrons to determine their energy distribution. From the results of this analysis it is possible to infer which elements are present on the specimen, what their chemical states are, and in what quantities they are present.

Measuring scattering intensity at scattering angles, XRD uses x-rays to characterize the crystallographic structure, crystallite size (grain size), and preferred orientation in samples.

This Philips MRD diffractomter is equipped with a four-crystal monochromator.

Shortest measurement times are achieved using Ultra GID for nanometer layers and the VANTEC-1 detector for reciprocal space maps.

This field emission scanning electron microscope (FE-SEM) system is utilized to observe the surface morphology of solid samples.

The key feature of confocal laser microscopy is its ability to produce in-focus images of thick specimens, a process known as optical sectioning. Images are acquired point-by-point and reconstructed with a computer, allowing real-time fluorescence detection and three-dimensional reconstructions of topologically-complex objects.

This field emission scanning electron microscope (FE-SEM) system is utilized to observe the surface morphology of solid samples.

It is a low-vaccum SEM, which is used to monitor the surface of low-conductive specimen.

Three-dimensional morphology can be mapped with a sharp probe which scans across the surface with contact mode or noncontact mode.

The model is a multi-beam ultrahigh voltage electron microscope with an acceleration voltage of 1,000kV and 1,300 kV connected with two high-energy ion accelerators. The higher acceleration voltage shortens the wavelength of electrons and improves resolution. JEM-ARM1300 has the world highest point resolution of 0.12 nm.

With an acceleration voltage of 1,300 kV, high point resolution of 0.3 nm is available.

The analyzer provides surface area and pore size analysis from accurate measurement of gas adsorption.

The morphology of nanometer structure can be mapped with AFM or STM.